锦鲤求职岗位描述
岗位核心职责：
1.负责GaAs/InP基III/V族化合物半导体材料外延生长工艺的开发。
2.开展GaAs/InP基材料与器件结构的测试表征（含XRD、光致发光PL、原子力显微镜AFM、激光椭偏仪、LEI、霍尔测试HALL，CV等），并负责对应表征设备的日常维护。
3.开展工艺故障排查，通过管控参数与工程数据维护，实现工艺及设备的稳定运维与性能优化。
4.直接对接各跨部门团队，提出、开发并验证设备的改造与优化方案。
5.根据客户需求支持客户现场机台工艺验证工作。
Job Responsibilities:
1.Responsible for developing epitaxial growth processes of GaAs/InP-based III-V compound semiconductor materials.
2.Conduct advanced metrology testing and characterization of GaAs/InP-based materials and device structures, including XRD, photoluminescence (PL), atomic force microscopy (AFM), laser ellipsometry (LEI), Hall measurement, CV testing, etc., and perform routine maintenance of corresponding characterization tools.
3.Troubleshoot process abnormalities; realize stable operation and performance optimization of processes and equipment through parameter control and engineering data management.
4.Collaborate directly with cross-functional teams to propose, develop and verify equipment modification and optimization solutions.
5.Support on-site tool process demo and verification at customer sites in accordance with customer requirements.
岗位任职要求：
1.材料科学与电子工程专业博士，具备技术报告撰写经验，熟悉材料科学相关专业知识
2.逻辑思维缜密，动手实操能力强，具备良好的汇报展示能力
3.工作积极主动，具备紧迫感与责任担当
Job Requirements:
1.PhD in Material Science and/or EE, Experience of technical report preparation, knowledge in material science
2. Strong logical thinking, hands-on, presentation skills;
3. Self-motivator with sense of urgency and accountability;